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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The success of transistor radios led to transistors replacing vacuum tubes as the dominant electronic technology in the late 1950s. [28] The transistor radio went on to become the most popular electronic communication device of the 1960s and 1970s. Billions of transistor radios are estimated to have been sold worldwide between the 1950s and ...
The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the collector current with an increase in the collector voltage. The same type of length modulation in MOSFETs is also commonly referred to as Early effect.
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
A stylized replica of the first transistor John Bardeen, William Shockley and Walter Brattain at Bell Labs, 1948. According to theories of the time, Shockley's field effect transistor, a cylinder coated thinly with silicon and mounted close to a metal plate, should have worked. He ordered Brattain and Bardeen to find out why it wouldn't.
BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens)The BC107, BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [1] and many other countries from the 1960s.