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In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
[1] [2] For semiconductor lasers, the saturation effect is negligible. We derived the gain g for a Fabry-Perot semiconductor laser based on the density matrix equations and expressions for the natural linewidth. [1] [2] Thus, the linewidth theory [2] [8] [9] is an integral part of the nonlinear theory.
On May 26, 2017, Veeco acquired front-end semiconductor process control equipment manufacturer Ultratech to expand into the advanced packaging market. [11] This added to the portfolio advanced packaging lithography, laser spike annealing and 3D wafer inspection technology used in high volume manufacturing of logic and memory devices.
For high volume process annealing, gas fired conveyor furnaces are often used. For large workpieces or high quantity parts, car-bottom furnaces are used so workers can easily move the parts in and out. Once the annealing process is successfully completed, workpieces are sometimes left in the oven so the parts cool in a controllable way.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
XeCl Excimer-Laser Annealing (ELA) is the first key method to produce p-Si by melting a-Si material through laser irradiation. The counterpart of a-Si, polycrystalline silicon, which can be synthesized from amorphous silicon by certain procedures, has several advantages over widely used a-Si TFT: High electron mobility rate;