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This model typically applies when charge carriers have been emitted from some region of a solid—the cloud of emitted carriers can form a space charge region if they are sufficiently spread out, or the charged atoms or molecules left behind in the solid can form a space charge region. Space charge effects are most pronounced in dielectric ...
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or been forced away by an electric field. The only elements left ...
At any point in space, the updated value of the H-field in time is dependent on the stored value of the H-field and the numerical curl of the local distribution of the E-field in space. Iterating the E-field and H-field updates results in a marching-in-time process wherein sampled-data analogs of the continuous electromagnetic waves under ...
Viewed from a large distance, this screening hole has the effect of an overlaid positive charge which cancels the electric field produced by the electron. Only at short distances, inside the hole region, can the electron's field be detected. For a plasma, this effect can be made explicit by an -body calculation.
In thick solar cells there is very little electric field in the active region outside the space charge zone, so the dominant mode of charge carrier separation is diffusion. In these cells the diffusion length of minority carriers (the length that photo-generated carriers can travel before they recombine) must be large compared to the cell ...
The thickness of such a layer is several Debye lengths thick, a value whose size depends on various characteristics of plasma (e.g. temperature, density, etc.). A Debye sheath arises in a plasma because the electrons usually have a temperature on the order of magnitude or greater than that of the ions and are much lighter.
The Early effect in bipolar junction transistors is named after Jim Early, who first characterized it and published a paper on it in 1952. [1] The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the ...
The Poisson–Boltzmann equation describes a model proposed independently by Louis Georges Gouy and David Leonard Chapman in 1910 and 1913, respectively. [3] In the Gouy-Chapman model, a charged solid comes into contact with an ionic solution, creating a layer of surface charges and counter-ions or double layer. [4]