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The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors , or to build amplifiers .
I–V characteristics and output plot of a JFET n-channel transistor Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V. FET conventional symbol ...
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit.
Dual discrete complementary JFETS house two N-channel JFETs in one monolithic unit and two P-channel units in another monolithic unit. Because they are built on the same die, dual N-Channel JFETs have nearly equivalent or matched electrical characteristics. The same can be said for the dual P-Channel JFETs.
The current–voltage (IV) transfer characteristics determine how the JFET VCR will perform. Specifically, the linear regions of the IV curves determine the input signal range where the VCR will behave as a resistor. The curves of a specific JFET also dictate the range of resistor values that the VCR can be programmed to.
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The threshold voltage, commonly abbreviated as V th or V GS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.