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The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [ 3 ] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of ...
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.
There are two main kinds of semiconductor memory: volatile and non-volatile. Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache.
[12] [13] The invention of the MOSFET enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores. [14] The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM).
The memory, however, was disliked for its high random-access latencies. In the N64, the RDRAM modules are cooled by a passive heatspreader assembly. [ 12 ] Nintendo also included a provision for upgrading the system memory with the Expansion Pak accessory, allowing certain games to be enhanced with either enhanced graphics, higher resolution or ...