Ads
related to: transistor tutorial videos free full download office 2010groupon.com has been visited by 100K+ users in the past month
Search results
Results From The WOW.Com Content Network
The VMOS structure has a V-groove at the gate region. A VMOS (/ ˈ v iː m ɒ s /) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor ().
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
The transistor speed is proportional to the on-current: The higher the on-current, the faster a transistor will be able to charge its fan-out (consecutive capacitive load). For a given transistor speed and a maximum acceptable subthreshold leakage, the subthreshold slope thus defines a certain minimal threshold voltage.
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating ...
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.