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A phototransistor is a light-sensitive transistor. A common type of phototransistor, the bipolar phototransistor , is in essence a bipolar transistor encased in a transparent case so that light can reach the base–collector junction .
Schematic diagram of an opto-isolator showing source of light (LED) on the left, dielectric barrier in the center, and sensor (phototransistor) on the right [note 1]. An opto-isolator (also called an optocoupler, photocoupler, or optical isolator) is an electronic component that transfers electrical signals between two isolated circuits by using light. [1]
Phototransistors, which act like amplifying photodiodes. Pinned photodiodes, a photodetector structure with low lag, low noise, high quantum efficiency, and low dark current, widely used in most CCD and CMOS image sensors. [16] Quantum dot photoconductors or photodiodes, which can handle wavelengths in the visible and infrared spectral regions.
An additional advantage of a solaristor is, therefore, the potential reduction of the standard phototransistor's area and interconnection complexity. By using solaristors, it would be possible in theory to replace the in-plane three-electrode architecture by a vertical, two-electrode photodiode-like architecture in systems like photo-sensors ...
Phototransistor. Emitter-switched bipolar transistor (ESBT) is a monolithic configuration of a high-voltage bipolar transistor and a low-voltage power MOSFET in cascode topology. It was introduced by STMicroelectronics in the 2000s, [103] and abandoned a few years later around 2012. [104]
A Photoreflector is a light emitting diode and a phototransistor housed in a compact package that can be used for detection of proximity and colour of objects. They are a popular component in line following robots and other robotics.
Photoconductivity is an optical and electrical phenomenon in which a material becomes more electrically conductive due to the absorption of electromagnetic radiation such as visible light, ultraviolet light, infrared light, or gamma radiation.
Due to the need to manufacture HBT devices with extremely high-doped thin base layers, molecular beam epitaxy is principally employed. In addition to base, emitter and collector layers, highly doped layers are deposited on either side of collector and emitter to facilitate an ohmic contact, which are placed on the contact layers after exposure by photolithography and etching.