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The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
Wafer carriers or cassettes, which can hold several wafers at once, were developed to carry several wafers between process steps, but wafers had to be individually removed from the carrier, processed and returned to the carrier, so acid-resistant carriers were developed to eliminate this time consuming process, so the entire cassette with ...
The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent, it will decompose most organic matter, and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
a wide variety of other processes for cleaning, planarizing, or modifying the chemical properties of microfabricated devices can also be performed. Some examples include: Doping by either thermal diffusion or ion implantation; Chemical-mechanical planarization (CMP) Wafer cleaning, also known as "surface preparation" (see below) Wire bonding
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon.
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This process comes in a sequence pattern as follows. First, the isolation trench pattern is transferred to the silicon wafer. Oxide is deposited on the wafer in the shape of trenches. A photo mask, composed of silicon nitride, is patterned on the top of this sacrificial oxide. A second layer is added to the wafer to create a planar surface.