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An example is the Stone Wales defect in nanotubes, which consists of two adjacent 5-membered and two 7-membered atom rings. Schematic illustration of defects in a compound solid, using GaAs as an example. Amorphous solids may contain defects. These are naturally somewhat hard to define, but sometimes their nature can be quite easily understood.
The relationship is defined by a symmetry operation called a twin operation. [1] [2] The twin operation is not one of the normal symmetry operations of the untwinned crystal structure. For example, the twin operation may be reflection across a plane that is not a symmetry plane of the single crystal. [1] [2]
(Similar defects form in GaN on silicon, where they are correctly identified as inversion domains). An example is illustrated in the diagram below. [3] Figure 4. Highlighted area showing an inversion domain, incorrectly called an antiphase domain, in GaAs on Si. [4] The shaded region, B, is an example of an APD.
Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion [1] and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep. [2]
Stacking faults are two dimensional planar defects that can occur in crystalline materials. They can be formed during crystal growth, during plastic deformation as partial dislocations move as a result of dissociation of a perfect dislocation, or by condensation of point defects during high-rate plastic deformation. [3]
Variations in the electrical conductivity and magnetic permeability of the test object, and the presence of defects causes a change in eddy current and a corresponding change in phase and amplitude that can be detected by measuring the impedance changes in the coil, which is a telltale sign of the presence of defects. [5]
The introduction of atom 1 into a crystal of atom 2 creates a pinning point for multiple reasons. An alloying atom is by nature a point defect, thus it must create a stress field when placed into a foreign crystallographic position, which could block the passage of a dislocation.
ATPG (acronym for both automatic test pattern generation and automatic test pattern generator) is an electronic design automation method or technology used to find an input (or test) sequence that, when applied to a digital circuit, enables automatic test equipment to distinguish between the correct circuit behavior and the faulty circuit behavior caused by defects.