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Tetravalent main-group-element hydrides of form A P H 4 (A P = B-, C, N +, O 2+, Al-, Si, P +, and S 2+, where A P is a tetravalent atom or ion) are known to distort from the square planar to tetrahedral geometry. For all A P H 4 systems in D 4h symmetry, the ground state is a 1g. The exact electronic configuration, however, is dependent on the ...
Prostaglandin G 2 (PGG 2) is an organic peroxide belonging to the family of prostaglandins. [1] The compound has been isolated as a solid, although it is usually used in vivo. It quickly converts into prostaglandin H 2, a process catalyzed by the enzyme cyclooxygenase (COX). Prostaglandin G 2 is produced from the fatty acid arachidonic acid.
A cubic silsesquioxane. A silsesquioxane is an organosilicon compound with the chemical formula [RSiO 3/2] n (R = H, alkyl, aryl, alkenyl or alkoxyl.). [1] Silsesquioxanes are colorless solids that adopt cage-like or polymeric structures with Si-O-Si linkages and tetrahedral Si vertices.
The Gross–Pitaevskii equation (GPE, named after Eugene P. Gross [1] and Lev Petrovich Pitaevskii [2]) describes the ground state of a quantum system of identical bosons using the Hartree–Fock approximation and the pseudopotential interaction model.
A/m 2: A⋅m −2: U, ΔV; Δϕ; E, ξ potential difference; voltage; electromotive force: volt: V = J/C kg⋅m 2 ⋅s −3 ⋅A −1: R; Z; X electric resistance; impedance; reactance: ohm: Ω = V/A kg⋅m 2 ⋅s −3 ⋅A −2: ρ resistivity: ohm metre: Ω⋅m kg⋅m 3 ⋅s −3 ⋅A −2: P electric power: watt: W = V⋅A kg⋅m 2 ⋅s −3 ...
First, phospholipase A 2 (PLA 2) facilitates the conversion of phospholipids to arachidonic acid, the framework from which all prostaglandins are formed. [15] Arachidonic acid then reacts with two cyclooxygenase (COX) receptors, COX-1 and COX-2, or PGH synthase to form prostaglandin H 2 , an intermediate. [ 15 ]
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]