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  2. Electron mobility - Wikipedia

    en.wikipedia.org/wiki/Electron_mobility

    Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, . Then the electron mobility μ is defined as =.

  3. Carrier generation and recombination - Wikipedia

    en.wikipedia.org/wiki/Carrier_generation_and...

    Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.

  4. Diffusion current - Wikipedia

    en.wikipedia.org/wiki/Diffusion_current

    The carrier particles, namely the holes and electrons of a semiconductor, move from a place of higher concentration to a place of lower concentration. Hence, due to the flow of holes and electrons there is a current. This current is called the diffusion current. The drift current and the diffusion current make up the total current in the conductor.

  5. Shockley–Queisser limit - Wikipedia

    en.wikipedia.org/wiki/Shockley–Queisser_limit

    A blackbody at 6000 K puts out 7348 W per square centimetre, so a value for u of 44% and a value of 5.73 × 10 18 photons per joule (corresponding to a band gap of 1.09 V, the value used by Shockley and Queisser) gives Q s equal to 1.85 × 10 22 photons per second per square centimetre.

  6. Electrical mobility - Wikipedia

    en.wikipedia.org/wiki/Electrical_mobility

    is the mobility (m 2 /(V·s)). In other words, the electrical mobility of the particle is defined as the ratio of the drift velocity to the magnitude of the electric field: =. For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1]

  7. Drift velocity - Wikipedia

    en.wikipedia.org/wiki/Drift_velocity

    The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.

  8. Haynes–Shockley experiment - Wikipedia

    en.wikipedia.org/wiki/Haynes–Shockley_experiment

    where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position.

  9. Saturation velocity - Wikipedia

    en.wikipedia.org/wiki/Saturation_velocity

    The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...