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Generalized h-parameter model of an NPN BJT. Replace x with e , b or c for CE, CB and CC topologies respectively. Another model commonly used to analyze BJT circuits is the h-parameter model, also known as the hybrid equivalent model, closely related to the hybrid-pi model and the y-parameter two-port , but using input current and output ...
This parameter is often specified as h FE or the DC current-gain (β DC) in datasheets. h ox = h oe – The output impedance of transistor. This term is usually specified as an admittance and has to be inverted to convert it to an impedance. Date: 4 August 2010, 06:50 (UTC) Source: H-parameters.gif; Author: H-parameters.gif: The original ...
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
The Gummel–Poon model and modern variants of it are widely used in popular circuit simulators such as SPICE. A significant effect that the Gummel–Poon model accounts for is the variation of the transistor β F {\displaystyle \beta _{\text{F}}} and β R {\displaystyle \beta _{\text{R}}} values with the direct current level.
Transistor models are used for almost all modern electronic design work. Analog circuit simulators such as SPICE use models to predict the behavior of a design. Most design work is related to integrated circuit designs which have a very large tooling cost, primarily for the photomasks used to create the devices, and there is a large economic incentive to get the design working without any ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...
I suggest moving it to a new article on BJT models and just leaving a more condensed version. I'm planning on writing an article on the hybrid pi model (to avoid the redudant parameter explanations on the common emitter, common base, etc. pages) and logically it should be grouped with the h-parameter model currently in this article. Problem is ...
The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since the potential barrier in the valence band is higher than in the ...