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AlGa (Aluminum-Gallium) is a degenerate alloy [clarification needed] that results from liquid gallium infiltrating the crystal structure of aluminium metal. The resulting alloy is very weak and brittle, being broken under the most minute pressure.
Aluminium gallium arsenide (also gallium aluminium arsenide) (Al x Ga 1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs .
Gallium is a chemical element; ... Gallium disrupts the protective oxide layer on aluminium, allowing water to react with the aluminium in AlGa to produce hydrogen gas.
Aluminium gallium indium phosphide (Al Ga In P, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. [1]
Bronze (tin, aluminum or other element) Aluminium bronze ; Arsenical bronze ... AlGa (aluminium, gallium) Galfenol (iron) Galinstan (indium, tin) Gold
Aluminium gallium antimonide, also known as gallium aluminium antimonide or AlGaSb (Al x Ga 1-x Sb), is a ternary III-V semiconductor compound. It can be considered as an alloy between aluminium antimonide and gallium antimonide. The alloy can contain any ratio between aluminium and gallium. AlGaSb refers generally to any composition of the alloy.
The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.
Aluminium arsenide (Al As) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide ( Ga As) which results in its semiconductor properties. [ 3 ]