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The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
The electrons and holes travel in opposite directions, but they also have opposite charges, so the overall current is in the same direction on both sides of the diode, as required. The Shockley diode equation models the forward-bias operational characteristics of a p–n junction outside the avalanche (reverse-biased conducting) region.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
DAEs assume smooth characteristics for individual components; for example, a diode can be modeled/represented in a MNA with DAEs via the Shockley equation, but one cannot use an apparently simpler (more ideal) model where the sharply exponential forward and breakdown conduction regions of the curve are just straight vertical lines.
Equation (1) is valid for the practically relevant situation, where the neutral base region of a pn-junction makes up most of the volume of the diode. Typically, the thickness of a crystalline Si solar cell is ~ 200 μm while the thickness of the emitter and space charge region is only on the order of hundreds of nanometers, i.e. three orders ...
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.