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Valence shell electron pair repulsion (VSEPR) theory (/ ˈ v ɛ s p ər, v ə ˈ s ɛ p ər / VESP-ər, [1]: 410 və-SEP-ər [2]) is a model used in chemistry to predict the geometry of individual molecules from the number of electron pairs surrounding their central atoms. [3]
Like other chlorosilanes or silanes, silicon tetrachloride reacts readily with water: . SiCl 4 + 2 H 2 O → SiO 2 + 4 HCl. The reaction can be noticed on exposure of the liquid to air, as SiCl 4 vapour produces fumes as it reacts with moisture to give a cloud-like aerosol of silica and hydrochloric acid. [6]
According to VSEPR theory, T-shaped geometry results when three ligands and two lone pairs of electrons are bonded to the central atom, written in AXE notation as AX 3 E 2. The T-shaped geometry is related to the trigonal bipyramidal molecular geometry for AX 5 molecules with three equatorial and two axial ligands.
The geometry is common for certain main group compounds that have a stereochemically-active lone pair, as described by VSEPR theory. Certain compounds crystallize in both the trigonal bipyramidal and the square pyramidal structures, notably [Ni(CN) 5 ] 3− .
The handling of this chemical may incur notable safety precautions. It is highly recommend that you seek the Material Safety Datasheet for this chemical from a reliable source, it this case, noting that one should "avoid all contact!
This geometry is almost always consistent with VSEPR theory, which usually explains non-collinearity of atoms with a presence of lone pairs. There are several variants of bending, where the most common is AX 2 E 2 where two covalent bonds and two lone pairs of the central atom (A) form a complete 8-electron shell .
Type. Fixed period. Adjustment frequency. What this means. 5/1 ARM. 5 years. Once per year. Rate locked for 5 years, then adjusts every 12 months. 7/6 ARM. 7 years
Silane can be produced by several routes. [8] Typically, it arises from the reaction of hydrogen chloride with magnesium silicide: . Mg 2 Si + 4 HCl → 2 MgCl 2 + SiH 4. It is also prepared from metallurgical-grade silicon in a two-step process.