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The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics , a common collector amplifier (also known as an emitter follower ) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies , typically used as a voltage buffer .
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
Download as PDF; Printable version; In other projects ... In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT ...