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Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
The silicon laser is fabricated by a technique called plasma assisted wafer bonding. Silicon waveguides are first fabricated on a silicon on insulator (SOI) wafer. This SOI wafer and the un-patterned III-V wafer are then exposed to an oxygen plasma before being pressed together at a low (for semiconductor manufacturing) temperature of 300C for 12 hours.
Once tested, a wafer is typically reduced in thickness in a process also known as "backlap", [118]: 6 "backfinish", "wafer backgrind" or "wafer thinning" [191] before the wafer is scored and then broken into individual dies, a process known as wafer dicing. Only the good, unmarked chips are packaged.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
By using a liquid with a higher refractive index than air, immersion lithography allows for smaller features to be created on the wafer. [1] Immersion lithography replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index greater than one.
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A robot in the wafer loader picks up one of the wafers from the cassette and loads it onto the wafer stage where it is aligned to enable another, finer alignment process that will occur later on. The pattern of the circuitry for each chip is contained in a pattern etched in chrome on the reticle, which is a plate of transparent quartz .
To ensure good contact of the wafer pair a constant pressure between 2.5 and 4.5 bar during bonding is applied. [3] The frames should be kept above the non-flatness value of the wafer, based on the fact that defects usually are caused by the curvature of the wafer. [3] A shear strength of the bonded wafer pair of about 18 to 25 MPa is ...