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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
English: A schematic cross section of a planar NPN BJT, showing the three differently doped silicon regions. Date: 2 August 2010: ... Bipolar junction transistor;
English: Simplified cross section of a planar npn Bipolar junction transistor showing the emitter, base and collector contacts and the respective regions with the silicon doping type. Replacement SVG version of File:Npn BJT cross section.PNG
Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts.
Simplified cross section of a planar npn bipolar junction transistor. The planar transistor was developed by Dr. Jean Hoerni [6] at Fairchild Semiconductor in 1959. The planar process used to make these transistors made mass-produced monolithic integrated circuits possible.
Cross section of 2N2222 in metal TO-18 package, showing connection wires between external pins and die. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications.
Cross-section of a typical IGBT showing internal connection of MOSFET and bipolar device. An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), [1] and thereby allow reduction of switching time and power dissipation. [2] [3] cross section and symbol of a simple NPN bipolar transistor cross section and symbol of a multiple emitter NPN bipolar transistor