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Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
Energy band diagram of a simple bipolar junction transistor under equilibrium showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the conduction band
Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption induced band bending are discussed. Figure 1: Energy band diagrams of the surface contact between metals and n-type semiconductors.
Cross section of a GaAs/AlGaAs/InGaAs pHEMT Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.. A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of ...
The band diagram of an NPN BJT in equilibrium: Date: 20 February 2007: Source: Own drawing, done in Inkscape: Author: ... Bipolar junction transistor; Global file usage.
Band diagram for n-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the Schottky barrier height, Φ B, as the difference between the interfacial conduction band edge E C and Fermi level E F. [For a p-type Schottky barrier, Φ B is the difference between E F and the valence band edge E V.]
Band diagram for straddling gap, n-n semiconductor heterojunction at equilibrium. The behaviour of a semiconductor junction depends crucially on the alignment of the energy bands at the interface. Semiconductor interfaces can be organized into three types of heterojunctions: straddling gap (type I), staggered gap (type II) or broken gap (type ...