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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
Date/Time Thumbnail Dimensions User Comment; current: 16:08, 31 August 2012: 720 × 720 (7 KB): Michael9422 {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|A simple NPN transistor amplifier circuit diagram with transistor labels.}} |Source = I created a postscript file, and converted it too SVG using the pstoedit program. |Date = ...
For example, in an application like this one where voltage is the output, a g-equivalent two-port could be selected for simplicity, as it uses a voltage amplifier in the output port. For R S values in the vicinity of r E the amplifier is transitional between voltage amplifier and current buffer.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
The schematic diagram symbol for a unijunction transistor represents the emitter lead with an arrow, showing the direction of conventional current when the emitter-base junction is conducting a current. A complementary UJT uses a p-type base and an n-type emitter, and operates the same as the n-type base device but with all voltage polarities ...
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]