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An avalanche photodiode (APD) ... The ENF is defined for any device, such as photomultiplier tubes, silicon solid-state photomultipliers, and APDs, that multiplies a ...
Photomultiplier tubes (photomultipliers or PMTs for short) are extremely sensitive detectors of light in the ultraviolet, visible, and near-infrared ranges of the electromagnetic spectrum. They are members of the class of vacuum tubes , more specifically vacuum phototubes .
In solid-state electronics, silicon photomultipliers (SiPMs) are single-photon-sensitive devices based on pixels of single-photon avalanche diodes (SPADs) implemented on common silicon substrate. [1] The dimension of each single avalanche diode can vary from 10 to 100 micrometres , with a typical density of up to 1,000 pixels/mm 2 .
P–n photodiodes are not used to measure extremely low light intensities. Instead, if high sensitivity is needed, avalanche photodiodes, intensified charge-coupled devices or photomultiplier tubes are used for applications such as astronomy, spectroscopy, night vision equipment and laser rangefinding.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Such a tube is more correctly called a 'photoemissive cell' to distinguish it from photovoltaic or photoconductive cells. Phototubes were previously more widely used but are now replaced in many applications by solid state photodetectors. The photomultiplier tube is one of the most sensitive light detectors, and is still widely used in physics ...
Photomultiplier tube, a vacuum tube converting incident photons into an electric signal. Photomultiplier tubes (PMTs for short) are members of the class of vacuum tubes, and more specifically vacuum phototubes, which are extremely sensitive detectors of light in the ultraviolet, visible, and near-infrared ranges of the electromagnetic spectrum.
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.