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A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
[12] [13] In 2015, Intel described a lateral nanowire (or gate-all-around) FET concept for the "5 nm" node. [14] In 2017, IBM revealed that it had created "5 nm" silicon chips, [15] using silicon nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design. The GAAFET transistors used had 3 nanosheets stacked on ...
FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Valtro PM-5/PM-5-350: Valtro: 12 gauge Italy: 1980s Vepr-12: Molot Oruzhie Ltd. 7.62×39mm 12 gauge Russia: 2003 Walther toggle-locked semi automatic shotgun [3] Walther: 12/65 Gauge Germany: 1920s Weatherby Orion: Weatherby: 12 gauge United States: 2014 Weatherby SA-08: Weatherby: 12 gauge 20 gauge United States: Winchester Model 20 ...
I–V characteristics and output plot of a JFET n-channel transistor Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V. FET conventional symbol ...
In 1998, the team developed the first N-channel FinFETs and successfully fabricated devices down to a 17 nm process. The following year, they developed the first P-channel FinFETs. [12] They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper. [13] In current usage the term FinFET has a less precise definition.
The Model 1000 was available in 12-gauge and 20-gauge, with trap (1000T) and skeet (1000S) variants. Both gauges were offered with 2 + 3 ⁄ 4-inch (7.0 cm) chambers; the 12-gauge was also sold with a 3-inch (7.6 cm) chamber for magnum shotshells. [1] The Model 1000 was offered by Smith & Wesson from 1973 to 1985. [3]