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The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Specific techniques to produce large single crystals (aka boules) include the Czochralski process (CZ), Floating zone (or Zone Movement), and the Bridgman technique. Dr. Teal and Dr. Little of Bell Telephone Laboratories were the first to use the Czochralski method to create Ge and Si single crystals. [7]
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers. It is still used in over 90 percent of all electronics in the world that use semiconductors. [1]
The major advantages is crucibleless growth that prevents contamination of the silicon from the vessel itself and therefore an inherently high-purity alternative to boule crystals grown by the Czochralski method. The concentrations of light impurities, such as carbon (C) and oxygen (O 2) elements, are extremely low.
In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and ...
The primary application of monocrystalline silicon is in the production of discrete components and integrated circuits.Ingots made by the Czochralski method are sliced into wafers about 0.75 mm thick and polished to obtain a regular, flat substrate, onto which microelectronic devices are built through various microfabrication processes, such as doping or ion implantation, etching, deposition ...
Bridgman–Stockbarger method; Van Arkel–de Boer process; Czochralski method; Epitaxy; Flux method; Fractional crystallization; Fractional freezing; Hydrothermal synthesis; Kyropoulos method; Laser-heated pedestal growth; Micro-pulling-down; Shaping processes in crystal growth; Skull crucible; Verneuil method; Zone melting
Most true synthetic alexandrite is grown by the Czochralski method, known as “pulling”.Another method is a “floating zone”, developed in 1964 by an Armenian scientist Khachatur Saakovich Bagdasarov, of the Russian (former Soviet) Institute of Crystallography, Moscow.