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  2. Backward diode - Wikipedia

    en.wikipedia.org/wiki/Backward_diode

    The backward diode has the unusual property that the so-called reverse bias direction actually has more current flow than the so-called forward bias. The forward I–V characteristic is the same as that of an ordinary P–N diode. The breakdown starts when reverse voltage is applied. In the case of Zener breakdown, it starts at a particular ...

  3. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    A silicon p–n junction in reverse bias. Connecting the p-type region to the negative terminal of the voltage supply and the n-type region to the positive terminal corresponds to reverse bias. If a diode is reverse-biased, the voltage at the cathode is comparatively higher than at the anode. Therefore, very little current flows until the diode ...

  4. PIN diode - Wikipedia

    en.wikipedia.org/wiki/PIN_diode

    Under zero- or reverse-bias (the "off" state), a PIN diode has a low capacitance. The low capacitance will not pass much of an RF signal. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about 1 ohm, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.

  5. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    The device does not attain its full blocking capability until the reverse current ceases. Reverse biased: For a bias between breakdown and 0 V, the reverse current is very small and asymptotically approaches -I s. For a normal P–N rectifier diode, the reverse current through the device is in the micro-ampere (μA) range.

  6. File:Diode-IV-Curve.svg - Wikipedia

    en.wikipedia.org/wiki/File:Diode-IV-Curve.svg

    English: Diode I-V diagram. Includes three main areas of operation: breakdown, reverse-biased, and forward-biased. Vbr denotes the breakdown voltage, and Vd denotes the voltage that is typically considered "on" (conducting current).

  7. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    Band-bending for p–n diode in reverse bias Quasi-Fermi levels in reverse-biased p–n diode. In reverse bias the occupancy level for holes again tends to stay at the level of the bulk p-type semiconductor while the occupancy level for electrons follows that for the bulk n-type. In this case, the p-type bulk band edges are raised relative to ...

  8. Zener diode - Wikipedia

    en.wikipedia.org/wiki/Zener_diode

    A Zener diode is a special type of diode designed to reliably allow current to flow "backwards" (inverted polarity) when a certain set reverse voltage, known as the Zener voltage, is reached. Zener diodes are manufactured with a great variety of Zener voltages and some are even variable.

  9. Zener effect - Wikipedia

    en.wikipedia.org/wiki/Zener_effect

    It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to numerous free minority carriers which suddenly increase the reverse current. [1]