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The main byproducts are silicon tetrachloride (chemical formula SiCl 4), hexachlorodisilane (Si 2 Cl 6) and dichlorosilane (H 2 SiCl 2), from which trichlorosilane can be separated by distillation. Tank car of trichlorosilane.
In inorganic chemistry, chlorosilanes are a group of reactive, chlorine-containing chemical compounds, related to silane (SiH 4) and used in many chemical processes. Each such chemical has at least one silicon-chlorine (Si−Cl) bond. Trichlorosilane is produced on the largest scale. The parent chlorosilane is silicon tetrachloride (SiCl 4). [1]
In the laboratory, SiCl 4 can be prepared by treating silicon with chlorine at 600 °C (1,112 °F): [1] Si + 2 Cl 2 → SiCl 4. It was first prepared by Jöns Jakob Berzelius in 1823. [4] Brine can be contaminated with silica when the production of chlorine is a byproduct of a metal refining process from metal chloride ore.
First, silicon is treated with hydrogen chloride at about 300 °C to produce trichlorosilane, HSiCl3, along with hydrogen gas, according to the chemical equation. Si + 3 HCl → HSiCl 3 + H 2. The trichlorosilane is then converted to a mixture of silane and silicon tetrachloride: 4 HSiCl 3 → SiH 4 + 3 SiCl 4. This redistribution reaction ...
The dominant examples come from the Direct process, i.e., (CH 3) 4-x SiCl x. Another important member is trichlorosilane (SiHCl 3). Organosilanes are a class of charge-neutral organosilicon compounds. Example: tetramethylsilane (Si(CH 3) 4) By tradition, compounds with Si-O-Si bonds are usually not referred to as silanes. Instead, they are ...
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Dichlorosilane, or DCS as it is commonly known, is a chemical compound with the formula H 2 SiCl 2. In its major use, it is mixed with ammonia (NH 3) in LPCVD chambers to grow silicon nitride in semiconductor processing. A higher concentration of DCS·NH 3 (i.e. 16:1), usually results in lower stress nitride films.
For example, SiCl 4 and Si forms Si n Cl 2n cyclic oligomers (with n = 12-16) at 900-1200°C. Under conditions of high vacuum and fast pumping, SiCl 2 may be isolated by rapidly quenching the reaction products or, under less stringent vacuum conditions, (SiCl 2 ) n polymer is deposited just beyond the hot zone while the perchlorosilanes Si n Cl ...