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  2. High Bandwidth Memory - Wikipedia

    en.wikipedia.org/wiki/High_Bandwidth_Memory

    High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...

  3. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is designed to be used in conjunction with high-performance graphics accelerators and network devices. [39] The first HBM memory chip was produced by SK Hynix in 2013. [40]

  4. GDDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR_SDRAM

    Graphics DDR SDRAM (GDDR SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) specifically designed for applications requiring high bandwidth, [1] e.g. graphics processing units (GPUs).

  5. What is high bandwidth memory and why is the US trying to ...

    www.aol.com/high-bandwidth-memory-why-us...

    High bandwidth memory (HBM) are basically a stack of memory chips, small components that store data. They can store more information and transmit data more quickly than the older technology ...

  6. GDDR7 SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR7_SDRAM

    Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, "double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing.

  7. DDR3 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR3_SDRAM

    Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.

  8. Chinese firms make headway in producing high bandwidth memory ...

    www.aol.com/news/chinese-firms-headway-producing...

    SINGAPORE/BEIJING (Reuters) -Two Chinese chipmakers are in the early stages of producing high bandwidth memory (HBM) semiconductors used in artificial intelligence chipsets, according to sources ...

  9. Exclusive-Chinese firms stockpile high-end Samsung chips as ...

    www.aol.com/news/exclusive-chinese-firms...

    Chinese firms have made some headway in producing HBM, with Huawei and memory chipmaker CXMT focusing on developing HBM2 chips, which are three generations behind the HBM3E model, Reuters reported ...