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Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.
Diffusion and electromigration tend to be accelerated by high temperatures, shortening the lifetime of the device; damage to junctions not leading to immediate failure may manifest as altered current–voltage characteristics of the junctions. Electrical overstress failures can be classified as thermally-induced, electromigration-related and ...
Electromigration (red arrow) is due to the momentum transfer from the electrons moving in a wire. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms.
eFuses can be made out of silicon or metal traces. In both cases, they work (blow) by electromigration, the phenomenon where electric flow causes the conductor material to move. Although electromigration is generally undesired in chip design as it causes failures, eFuses are made of weak traces that are designed to fail before others do. [3] [4]
Black's Equation is a mathematical model for the mean time to failure (MTTF) of a semiconductor circuit due to electromigration: a phenomenon of molecular rearrangement (movement) in the solid phase caused by an electromagnetic field. The equation is: [1] = ()
Within the branch of materials science known as material failure theory, the Goodman relation (also called a Goodman diagram, a Goodman-Haigh diagram, a Haigh diagram or a Haigh-Soderberg diagram) is an equation used to quantify the interaction of mean and alternating stresses on the fatigue life of a material. [1]
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.
class 3.1 Temperature-controlled locations: usually 25 years −5 °C: 45 °C: class 3.2 Partly temperature-controlled locations: usually 25 years −25 °C: 55 °C: class 3.3 Not temperature-controlled locations: usually 25 years −40 °C: 70 °C: class 3.4 Sites with heat-trap: usually 25 years −40 °C: 40 °C