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Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, . Then the electron mobility μ is defined as =.
The carrier particles, namely the holes and electrons of a semiconductor, move from a place of higher concentration to a place of lower concentration. Hence, due to the flow of holes and electrons there is a current. This current is called the diffusion current. The drift current and the diffusion current make up the total current in the conductor.
For holes, is the number of holes per unit volume in the valence band. To calculate this number for electrons, we start with the idea that the total density of conduction-band electrons, n 0 {\displaystyle n_{0}} , is just adding up the conduction electron density across the different energies in the band, from the bottom of the band E c ...
where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position.
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
is the mobility (m 2 /(V·s)). In other words, the electrical mobility of the particle is defined as the ratio of the drift velocity to the magnitude of the electric field: =. For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1]
Measured carrier mobilities for electrons and holes are shown in Figure 4. The mobility of carriers in Ga 0.47 In 0.53 As is unusual in two regards: The very high value of electron mobility; The unusually large ratio of electron to hole mobility. The room temperature electron mobility for reasonably pure samples of Ga 0.47 In