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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
Limits on physical memory for 32-bit platforms also depend on the presence and use of Physical Address Extension (PAE), which allows 32-bit systems to use more than 4 GB of physical memory. PAE and 64-bit systems may be able to address up to the full address space of the x86 processor.
To increase memory capacity and bandwidth, chips are combined on a module. For instance, the 64-bit data bus for DIMM requires eight 8-bit chips, addressed in parallel. Multiple chips with common address lines are called a memory rank. The term was introduced to avoid confusion with chip internal rows and banks. A memory module may bear more ...
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Many 32-bit computers have 32 physical address bits and are thus limited to 4 GiB (2 32 words) of memory. [3] [4] x86 processors prior to the Pentium Pro have 32 or fewer physical address bits; however, most x86 processors since the Pentium Pro, which was first sold in 1995, have the Physical Address Extension (PAE) mechanism, [5]: 445 which allows addressing up to 64 GiB (2 36 words) of memory.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
For example, the Intel Westmere 5600 series of processors access memory using interleaving, wherein memory access is distributed across three channels. If two memory DIMMs are used per channel, there is a reduction of maximum memory bandwidth for this configuration with UDIMM by some 5% in comparison to RDIMM. [2] [3]