When.com Web Search

Search results

  1. Results From The WOW.Com Content Network
  2. Power MOSFET - Wikipedia

    en.wikipedia.org/wiki/Power_MOSFET

    NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

  3. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic .

  4. List of MOSFET applications - Wikipedia

    en.wikipedia.org/wiki/List_of_MOSFET_applications

    MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.

  5. FET amplifier - Wikipedia

    en.wikipedia.org/wiki/FET_amplifier

    The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance .

  6. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl

  7. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]

  8. Floating-gate MOSFET - Wikipedia

    en.wikipedia.org/wiki/Floating-gate_MOSFET

    The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating ...

  9. Logic family - Wikipedia

    en.wikipedia.org/wiki/Logic_family

    Before the widespread use of integrated circuits, various solid-state and vacuum-tube logic systems were used but these were never as standardized and interoperable as the integrated-circuit devices. The most common logic family in modern semiconductor devices is metal–oxide–semiconductor (MOS) logic, due to low power consumption, small ...