Search results
Results From The WOW.Com Content Network
When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a voltage amplifier.
The first FET device to be successfully built was the junction field-effect transistor (JFET). [2] A JFET was first patented by Heinrich Welker in 1945. [4] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.
For example, V GS(off) for the Temic J202 device varies from −0.8 V to −4 V, [12] while the V GS(off) for the J308 varies between −1 V and −6.5 V. [13] Confusingly, the term pinch-off voltage is also used to refer to the V DS value that separates the linear and saturation regions.
The operating current of this JFET is typically 0.1 to 0.5 mA and is often referred to as bias, which is different from the phantom power interface which supplies 48 volts to operate the backplate of a traditional condenser microphone. [12] Electret microphone bias is sometimes supplied on a separate conductor. [13]
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown. In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage.
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.