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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.

  3. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    Date/Time Thumbnail Dimensions User Comment; current: 01:52, 23 August 2006: 740 × 400 (87 KB): Matt Britt == Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position.

  4. Translinear circuit - Wikipedia

    en.wikipedia.org/wiki/Translinear_circuit

    A translinear circuit is a circuit that carries out its function using the translinear principle. These are current-mode circuits that can be made using transistors that obey an exponential current-voltage characteristic—this includes bipolar junction transistors (BJTs) and CMOS transistors in weak inversion.

  5. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

  6. Common emitter - Wikipedia

    en.wikipedia.org/wiki/Common_emitter

    In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. It offers high current gain (typically 200), medium input resistance and a high output resistance.

  7. Common base - Wikipedia

    en.wikipedia.org/wiki/Common_base

    At low frequencies and under small-signal conditions, the circuit in Figure 1 can be represented by that in Figure 2, where the hybrid-pi model for the BJT has been employed. The input signal is represented by a Thévenin voltage source v s with a series resistance R s and the load is a resistor R L. This circuit can be used to derive the ...