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In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically (disk laser).
Rapid thermal anneal. Rapid thermal anneal (RTA) in rapid thermal processing is a process used in semiconductor device fabrication which involves heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film ...
External image. Anneal furnace, 2018. Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect their electrical properties. Heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film to film or film to ...
An excimer laser. An excimer laser, sometimes more correctly called an exciplex laser, is a form of ultraviolet laser which is commonly used in the production of microelectronic devices, semiconductor based integrated circuits or "chips", eye surgery, and micromachining. Since the 1960s, excimer lasers have been widely used in high-resolution ...
Process annealing, also called intermediate annealing, subcritical annealing, or in-process annealing, is a heat treatment cycle that restores some of the ductility to a product being cold-worked so it can be cold-worked further without breaking. The temperature range for process annealing ranges from 260 °C (500 °F) to 760 °C (1400 °F ...
Upconverting nanoparticles (UCNPs) are nanoscale particles (diameter 1–100 nm) that exhibit photon upconversion. In photon upconversion, two or more incident photons of relatively low energy are absorbed and converted into one emitted photon with higher energy. Generally, absorption occurs in the infrared, while emission occurs in the visible ...
Differential Hall Effect Metrology. Differential Hall Effect Metrology (DHEM) is an electrical depth profiling technique that measures all critical electrical parameters (resistivity, mobility and carriers) through an electrically active material at sub-nanometer depth resolution. [1] [2] DHEM is based on the previously developed Differential ...
A hybrid silicon laser is an optical source that is fabricated from both silicon and group III-V semiconductor materials (e.g. Indium (III) phosphide, Gallium (III) arsenide). It comprises a silicon waveguide fused to an active, light-emitting, III-V epitaxial semiconductor wafer. The III-V epitaxial wafer is designed with different layers such ...