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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
Schematic diagram of a single-electron transistor Left to right: energy levels of source, island and drain in a single-electron transistor for the blocking state (upper part) and transmitting state (lower part). The SET has, like the FET, three electrodes: source, drain, and a gate. The main technological difference between the transistor types ...
In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior. [ 2 ]
3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
For larger source impedances, the gain is determined by the resistor ratio R L / R S, and not by the transistor properties, which can be an advantage where insensitivity to temperature or transistor variations is important. An alternative to the use of the hybrid-pi model for these calculations is a general technique based upon two-port ...
The schematic diagram symbol for a unijunction transistor represents the emitter lead with an arrow, showing the direction of conventional current when the emitter-base junction is conducting a current. A complementary UJT uses a p-type base and an n-type emitter, and operates the same as the n-type base device but with all voltage polarities ...
To solve the problem with the high output resistance of the simple output stage the second schematic adds to this a "totem-pole" ("push–pull") output. It consists of the two n-p-n transistors V 3 and V 4, the "lifting" diode V 5 and the current-limiting resistor R 3 (see the figure on the right).
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]