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If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm 150 nm: NMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove Fairchild Semiconductor [5] 5,000 nm: 170 nm: PMOS December 1972: 1,000 nm? PMOS Robert H. Dennard ...
As the electron mobility in the n-type channel of NMOS MOSFETs is about three times that of the hole mobility in the p-type channel of PMOS MOSFETS, NMOS logic allows for an increased switching speed. For this reason NMOS logic quickly began to replace PMOS logic. By the late 1970s, NMOS microprocessors had overtaken PMOS processors. [16]
In PMOS, the polarities are reversed. The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type ...
For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate, not prone to damage from bus conflicts, and not as vulnerable to ...
A transmission gate (TG) is an analog gate similar to a relay that can conduct in both directions or block by a control signal with almost any voltage potential. [1] It is a CMOS-based switch, in which PMOS passes a strong 1 but poor 0, and NMOS passes strong 0 but poor 1.
The PMOS transistor's channel is in a low resistance state, connecting Vdd to Q. Q, therefore, registers Vdd. On the other hand, when the voltage of A is high (i.e. close to Vdd), the PMOS transistor is in a high resistance state, disconnecting Vdd from Q. The NMOS transistor is in a low resistance state, connecting Vss to Q. Now, Q registers Vss.
In 1957 Frosch and Derick were able to manufacture PMOS and NMOS planar gates. [17] Later a team at Bell Labs demonstrated a working MOS with PMOS and NMOS gates. [18] Both types were later combined and adapted into complementary MOS (CMOS) logic by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. [19]