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Silicon–germanium on insulator (SGOI) is a technology analogous to the silicon on insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents.
Germanium is a chemical element; it has symbol Ge and atomic number 32. It is lustrous, hard-brittle, ... Germanium is considered a technology-critical element.
Silicon-germanium (SiGe) thermoelectrics have been used for converting heat into electrical power in spacecraft designed for deep-space NASA missions since 1976. This material is used in the radioisotope thermoelectric generators (RTGs) that power Voyager 1, Voyager 2, Galileo, Ulysses, Cassini, and New Horizons spacecraft.
Gallium and germanium are used in semiconductors, while germanium is also used in infrared technology, fibre optic cables and solar cells. Antimony is used in bullets and other weaponry, while ...
Germanium is used in high-speed computer chips, plastics and military applications such as night-vision devices as well as satellite imagery sensors. Gallium is used in radar and radio ...
Strained silicon. Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. [1] This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (Si Ge).
China supplies 60% of the world's germanium, which is used in applications such as fibre optic cables, solar cells and infrared technology. Spot prices of germanium ingot have jumped nearly a ...
Like silicon, germanium has a high theoretical capacity (1600 mAh g-1), expands during charging, and disintegrates after a small number of cycles. [6] [7] However, germanium is 400 times more effective at intercalating lithium than silicon, making it an attractive anode material. The anodes claimed to retain capacities of 900 mAh/g after 1100 ...