Search results
Results From The WOW.Com Content Network
Historically, the first decade of semiconductor electronics was based entirely on germanium. Presently, the major end uses are fibre-optic systems, infrared optics, solar cell applications, and light-emitting diodes (LEDs). Germanium compounds are also used for polymerization catalysts and have most recently found use in the production of ...
Two oxides of germanium are known: germanium dioxide (GeO 2, germania) and germanium monoxide, (GeO). [4] The dioxide, GeO 2 can be obtained by roasting germanium disulfide (GeS 2) or by allowing elemental germanium to slowly oxidze in air, [5] and is a white powder that is only slightly soluble in water but reacts with alkalis to form germanates. [4]
Germanium dioxide, also called germanium(IV) oxide, germania, and salt of germanium, [1] is an inorganic compound with the chemical formula Ge O 2. It is the main ...
Germanium tetrachloride is a colourless, fuming liquid [4] with a peculiar, acidic odour. It is used as an intermediate in the production of purified germanium metal. In recent years, GeCl 4 usage has increased substantially due to its use as a reagent for fiber optic production.
In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection, gamma and X-ray spectrometry, and as particle detectors.
Germane is the chemical compound with the formula Ge H 4, and the germanium analogue of methane. It is the simplest germanium hydride and one of the most useful compounds of germanium. Like the related compounds silane and methane, germane is tetrahedral. It burns in air to produce GeO 2 and water. Germane is a group 14 hydride.
SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
The first organogermanium compound, tetraethylgermane, synthesized by Winkler in 1887, [3] by the reaction of germanium tetrachloride with diethylzinc. More commonly, these Ge(IV) compounds are prepared by alkylation of germanium halides by organolithium and Grignard reagents, including surfaces terminated with Ge-Cl bonds. [4]