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Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
Visualizing via-first, via-middle and via-last TSVs. Dictated by the manufacturing process, there exist three different types of TSVs: via-first TSVs are fabricated before the individual component (transistors, capacitors, resistors, etc.) are patterned (front end of line, FEOL), via-middle TSVs are fabricated after the individual component are patterned but before the metal layers (back-end ...
Fan-out wafer-level packaging: Variation of WLCSP. Like a BGA package but with the interposer built directly atop the die and encapsulated alongside it. eWLB: Embedded wafer level ball grid array: Variation of WLCSP. MICRO SMD-Chip-size package (CSP) developed by National Semiconductor [21] COB: Chip on board: Bare die supplied without a package.
A wafer-level package attached to a printed-circuit board. Wafer-level packaging (WLP) is a process in integrated circuit manufacturing where packaging components are attached to an integrated circuit (IC) before the wafer – on which the IC is fabricated – is diced. In WLP, the top and bottom layers of the packaging and the solder bumps are ...
Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
In electronics, a wafer (also called a slice or substrate) [1] is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon
Wafer-to-wafer bonding can reduce yields, since if any 1 of N chips in a 3D IC are defective, the entire 3D IC will be defective. Moreover, the wafers must be the same size, but many exotic materials (e.g. III-Vs) are manufactured on much smaller wafers than CMOS logic or DRAM (typically 300 mm), complicating heterogeneous integration.
In the case of a photomask, there is a one-to-one correspondence between the mask pattern and the wafer pattern. The mask covered the entire surface of the wafer which was exposed in its entirety in one shot. This was the standard for the 1:1 mask aligners that were succeeded by steppers and scanners with reduction optics. [7]