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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960–1961. [ 23 ] [ 24 ] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. [ 25 ]
In modern sets, a semiconductor diode is used for the detector, which is much more reliable than a crystal detector and requires no adjustments. [48] [81] [98] Germanium diodes (or sometimes Schottky diodes) are used instead of silicon diodes, because their lower forward voltage drop (roughly 0.3 V compared to 0.6 V [99]) makes them more sensitive.
Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
Shockley's diode equation is also described. This seminal work became the reference text for other scientists working to develop and improve new variants of the transistor and other devices based on semiconductors. [34] This resulted in his invention of the bipolar "junction transistor", which was announced at a press conference on July 4, 1951 ...
A schottky diode can be used to minimize the switching losses caused by the reverse recovery of a regular PN diode. [11] The switching losses are proportional to the switching frequency. In a complete real-world buck converter, there is also a command circuit to regulate the output voltage or the inductor current.
When forward-biased, a Schottky diode's voltage drop 0.25 V is much less than a standard silicon diode's 0.6 V. In a standard saturated transistor, the base-to-collector voltage is 0.6 V. In a Schottky transistor, the Schottky diode shunts current from the base into the collector before the transistor goes into saturation.