Search results
Results From The WOW.Com Content Network
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Ion implantation is an effective surface treatment technique that be used to enhance the surface properties of biomaterials. [ 2 ] [ 11 ] [ 12 ] [ 13 ] The unique advantage of plasma modification is that the surface properties and biocompatibility can be enhanced selectively while the favorable bulk attributes of the materials such as strength ...
Ion Implantation is a technique extensively used in the field of materials science for material modification. The effect it has on nanomaterials allows manipulation of mechanical, electronic, morphological, and optical properties. [1]
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]
At present, laser desorption/ionization methods using other inorganic matrices, such as nanomaterials, are often regarded as SALDI variants. A related method named "ambient SALDI" - which is a combination of conventional SALDI with ambient mass spectrometry incorporating the DART ion source - has also been demonstrated. [41]
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
Besides providing independent control of parameters such as ion energy, temperature and arrival rate of atomic species during deposition, this technique is especially useful to create a gradual transition between the substrate material and the deposited film, and for depositing films with less built-in strain than is possible by other techniques.
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.