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The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
Wanlass was given U.S. patent #3,356,858 for "Low Stand-By Power Complementary Field Effect Circuitry" in 1967. [ 3 ] In 1963, while studying MOSFET (metal–oxide–semiconductor field-effect transistor) structures, he noted the movement of charge through oxide onto a gate .
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors .
The use of the metal–semiconductor diode rectifier was proposed by Lilienfeld in 1926 in the first of his three transistor patents as the gate of the metal–semiconductor field effect transistors. [11] The theory of the field-effect transistor using a metal/semiconductor gate was advanced by William Shockley in 1939.
The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors , or to build amplifiers .
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel). Permanent electrical field polarisation in the ferroelectric causes this type of device to retain the transistor's ...