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Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.
Electromigration (red arrow) is due to the momentum transfer from the electrons moving in a wire. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms.
The model is abstract, not based on a specific physical model, but flexibly describes the failure rate dependence on the temperature, the electrical stress, and the specific technology and materials. More adequately described as descriptive than prescriptive, the values for A , n , and Q are found by fitting the model to experimental data.
eFuses can be made out of silicon or metal traces. In both cases, they work (blow) by electromigration, the phenomenon where electric flow causes the conductor material to move. Although electromigration is generally undesired in chip design as it causes failures, eFuses are made of weak traces that are designed to fail before others do. [3] [4]
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.
To perform efficient stress tests on the analog elements, reliability engineers must identify the worst-case scenario for the relevant analog blocks in the IC. For example, the worst-case scenario for voltage regulators may be the maximum regulation voltage and maximum load current; for charge pumps it may be the minimum supply voltage and ...
Feedback-controlled electromigration (FCE) is an experimental technique to investigate the phenomenon known as electromigration. By controlling the voltage applied as the conductance varies it is possible to keep the voltage at a critical level for electromigration .
Within the branch of materials science known as material failure theory, the Goodman relation (also called a Goodman diagram, a Goodman-Haigh diagram, a Haigh diagram or a Haigh-Soderberg diagram) is an equation used to quantify the interaction of mean and alternating stresses on the fatigue life of a material. [1]