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A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
A p–n junction diode. The circuit symbol is also shown. A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes.
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode.
Analog multimeter Digital multimeter. A multimeter (also known as a volt-ohm-milliammeter, volt-ohmmeter or VOM) [1] is a measuring instrument that can measure multiple electrical properties. [2] [3] A typical multimeter can measure voltage, resistance, and current, [4] in which case can be used as a voltmeter, ohmmeter, and ammeter.
English: a PN diode that display the electrical symbol associated with it. The triangle corresponds to the p side, while the other side is the n side The triangle corresponds to the p side, while the other side is the n side
All diodes exhibit this variable junction capacitance, but varactors are manufactured to exploit the effect and increase the capacitance variation. The figure shows an example of a cross section of a varactor with the depletion layer formed of a p–n junction. This depletion layer can also be made of a MOS or a Schottky diode.
Band diagram for p–n junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See P–n diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).