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Ion irradiation means in general using particle accelerators to shoot energetic ions on a material. Ion implantation is a variety of ion irradiation, as is swift heavy ions irradiation from particle accelerators induces ion tracks that can be used for nanotechnology .
The International Commission on Radiological Protection recommends limiting artificial irradiation to the public to an average of 1 mSv (0.001 Sv) of effective dose per year, not including medical and occupational exposures. [25] In a nuclear war, gamma rays from both the initial weapon explosion and fallout would be sources of radiation exposure.
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Swift heavy ion tracks have several established and potential practical applications. Ion tracks in polymers can be etched to form a nanometer-thin channel through a polymer foil, so called track etch membranes. These are in industrial use. [9] Irradiation of polyimide resists have potential to be used as templates for nanowire growth. [10]
Electron-beam processing or electron irradiation (EBI) is a process that involves using electrons, usually of high energy, to treat an object for a variety of purposes. This may take place under elevated temperatures and nitrogen atmosphere.
By introducing dopants or defects by ion implantation to modify their electrical functionality in desired ways; To treat cancer by electron, gamma or ion irradiation or via boron neutron capture therapy. Many of the radiation effects on materials are produced by collision cascades and covered by radiation chemistry.
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This broad definition includes both UHF and EHF (millimetre waves), but various sources use different other limits. [4] In all cases, microwaves include the entire super high frequency band (3 to 30 GHz, or 10 to 1 cm) at minimum, with RF engineering often putting the lower boundary at 1 GHz (30 cm), and the upper around 100 GHz (3 mm).