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  2. Depletion-load NMOS logic - Wikipedia

    en.wikipedia.org/wiki/Depletion-load_NMOS_logic

    The inclusion of depletion-mode NMOS transistors in the manufacturing process demanded additional manufacturing steps compared to the simpler enhancement-load circuits; this is because depletion-load devices are formed by increasing the amount of dopant in the load transistors channel region, in order to adjust their threshold voltage.

  3. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/.../Depletion_and_enhancement_modes

    The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...

  4. NMOS logic - Wikipedia

    en.wikipedia.org/wiki/NMOS_logic

    The major drawback with NMOS (and most other logic families) is that a direct current must flow through a logic gate even when the output is in a steady state (low in the case of NMOS). This means static power dissipation, i.e. power drain even when the circuit is not switching, leading to high power consumption.

  5. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    Comparison of enhancement-mode and depletion-mode MOSFET symbols, along with JFET symbols. The orientation of the symbols, (most significantly the position of source relative to drain) is such that more positive voltages appear higher on the page than less positive voltages, implying conventional current flowing "down" the page: [ 46 ] [ 47 ...

  6. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    In an n-channel "depletion-mode" device, a negative gate-to-source voltage causes a depletion region to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively ...

  7. NAND gate - Wikipedia

    en.wikipedia.org/wiki/NAND_gate

    In the depletion-load NMOS logic realization in the middle below, the switches are the transistors T2 and T3, and the transistor T1 fulfills the function of the pull-up resistor. In the CMOS realization on the right below, the switches are the n-type transistors T3 and T4, and the pull-up resistor is made up of the p-type transistors T1 and T2 ...

  8. Logic family - Wikipedia

    en.wikipedia.org/wiki/Logic_family

    In computer engineering, a logic family is one of two related concepts: A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced ...

  9. JFET - Wikipedia

    en.wikipedia.org/wiki/JFET

    JFETs are sometimes referred to as depletion-mode devices, as they rely on the principle of a depletion region, which is devoid of majority charge carriers. The depletion region has to be closed to enable current to flow. JFETs can have an n-type or p-type channel. In the n-type, if the voltage applied to the gate is negative with respect to ...