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Data orientation is the representation of tabular data in a linear memory model such as in-disk or in-memory. The two most common representations are column-oriented (columnar format) and row-oriented (row format). [1] [2] The choice of data orientation is a trade-off and an architectural decision in databases, query engines, and numerical ...
The storage cells on a memory chip are laid out in a rectangular array of rows and columns. The read process in DRAM is destructive and removes the charge on the memory cells in an entire row, so there is a column of specialized latches on the chip called sense amplifiers, one for each column of memory cells, to temporarily hold the data ...
LMDB treats the computer's memory as a single address space, shared across multiple processes or threads using shared memory with copy-on-write semantics (known historically as a single-level store). Most former modern computing architectures had a 32-bit memory address space, imposing a hard limit of 4 GB on the size of any database that ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above] .
Also some memory controllers have a maximum supported number of ranks. DRAM load on the command/address (CA) bus can be reduced by using registered memory. [citation needed] Predating the term rank (sometimes also called row) is the use of single-sided and double-sided modules, especially with SIMMs. While most often the number of sides used to ...
Rowhammer (also written as row hammer or RowHammer) is a computer security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 ( high voltage level) and reset to store a logic 0 (low voltage level).