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The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes."
Third-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions ("first generation") and thin film cells ("second generation").
The band gap (1.34 eV) of an ideal single-junction cell is close to that of silicon (1.1 eV), one of the many reasons that silicon dominates the market. However, silicon's efficiency is limited to about 30% (Shockley–Queisser limit). It is possible to improve on a single-junction cell by vertically stacking cells with different bandgaps ...
English: The Shockley-Queisser limit for the maximum possible efficiency of a solar cell. The x-axis is the bandgap of the solar cell, the y-axis is the highest possible efficiency (ratio of electrical power output to light power input).
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The Shockley–Queisser limit radiative efficiency limit, also known as the detailed balance limit, [105] [106] is about 31% under an AM1.5G solar spectrum at 1000 W/m 2, for a Perovskite bandgap of 1.55 eV. [107] This is slightly smaller than the radiative limit of gallium arsenide of bandgap 1.42 eV which can reach a radiative efficiency of 33%.
Hans-Joachim Queisser (born 6 July 1931, Berlin, Germany) is a solid-state physicist. He is best known for co-authoring the 1961 work on solar cells that detailed what is today known as the Shockley–Queisser limit , now considered the key contribution in this field.
Shockley Semiconductor Laboratory, later known as Shockley Transistor Corporation, was a pioneering semiconductor developer founded by William Shockley, and funded by Beckman Instruments, Inc., in 1955. [2] It was the first high technology company, in what came to be known as Silicon Valley, to work on silicon-based semiconductor devices.