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Generally this means that high current circuits such as on chip power regulators use metal–oxide–semiconductor field-effect transistors (MOSFETs) for efficient control, and 'sea of logic' use conventional CMOS structures, while those portions of specialized very high performance circuits such as ECL dividers and LNAs use bipolar devices.
Often, in addition to the continuous rating, separate SOA curves are also plotted for short duration pulse conditions (1 ms pulse, 10 ms pulse, etc.). The safe operating area curve is a graphical representation of the power handling capability of the device under various conditions.
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
One style of current limiting circuit is shown in the image. The schematic represents a simple protection mechanism used in regulated DC supplies and class-AB power amplifiers. Q1 is the pass or output transistor. R sens is the load current sensing device. Q2 is the protection transistor which turns on as soon as the voltage across R sens ...
A resistor removed from a high voltage tube circuit shows damage from voltaic arcing on the resistive metal oxide layer. Resistors can fail open or short, alongside their value changing under environmental conditions and outside performance limits. Examples of resistor failures include: Manufacturing defects causing intermittent problems.
A different form of short-circuit testing is done to assess the mechanical strength of the transformer windings, and their ability to withstand the high forces produced if an energized transformer experiences a short-circuit fault. Currents during such events can be several times the normal rated current.
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In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.