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The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes."
For a two layer cell, one layer should be tuned to 1.64 eV and the other at 0.94 eV, with a theoretical performance of 44%. A three-layer cell should be tuned to 1.83, 1.16 and 0.71 eV, with an efficiency of 48%. A theoretical "infinity-layer" cell would have a theoretical efficiency of 68.2% for diffuse light. [11]
The Shockley–Queisser limit gives the maximum possible efficiency of a single-junction solar cell under un-concentrated sunlight, as a function of the semiconductor band gap. If the band gap is too high, most daylight photons cannot be absorbed; if it is too low, then most photons have much more energy than necessary to excite electrons ...
The numbers are normally not similar as you suggest. But in any case, f c cannot be more than 1, and the upper limit (the Shockley-Queisser limit) requires taking f c = 1. Eric Kvaalen 19:05, 6 September 2016 (UTC) Yes, virtually all above-gap photons come from recombination, but not all recombinations create above-bandgap photons.
Hans-Joachim Queisser (born 6 July 1931, Berlin, Germany) is a solid-state physicist. He is best known for co-authoring the 1961 work on solar cells that detailed what is today known as the Shockley–Queisser limit , now considered the key contribution in this field.
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Shockley Semiconductor Laboratory, later known as Shockley Transistor Corporation, was a pioneering semiconductor developer founded by William Shockley, and funded by Beckman Instruments, Inc., in 1955. [2] It was the first high technology company, in what came to be known as Silicon Valley, to work on silicon-based semiconductor devices.