Search results
Results From The WOW.Com Content Network
Under zero- or reverse-bias (the "off" state), a PIN diode has a low capacitance. The low capacitance will not pass much of an RF signal. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about 1 ohm, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.
Unlike electronic integration where silicon is the dominant material, system photonic integrated circuits have been fabricated from a variety of material systems, including electro-optic crystals such as lithium niobate, silica on silicon, silicon on insulator, various polymers, and semiconductor materials which are used to make semiconductor lasers such as GaAs and InP.
[4] [5] The addition of the suppressor grid permits much greater output signal amplitude to be obtained from the plate of the pentode in amplifier operation than from the plate of the screen-grid tube at the same plate supply voltage. Pentodes were widely manufactured and used in electronic equipment until the 1960s to 1970s, during which time ...
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. [1] It produces an electrical current when it absorbs photons.
The DO-35 (also known as DO-204-AH or SOD27) is a semiconductor package used to encapsulate signal diodes (i.e., diodes meant to handle small amounts of current and voltage). [ 10 ] [ 13 ] [ 2 ] It is often used to package small signal, low power diodes such as 1N4148 (a 100 V, 300 mA silicon diode.)
BZ-series silicon Zener diodes (e.g., BZY88C4V7 4.7V Zener diode) Other common numbering/coding systems (generally manufacturer-driven) include: GD-series germanium diodes (e.g., GD9) – this is a very old coding system; OA-series germanium diodes (e.g., OA47) – a coding sequence developed by Mullard, a UK company
Here, the term photo detector refers to a device that measures the power of a bright beam, typically in the range from a few microwatts up to about 0.1 W. The typical example is a PIN photo diode. In case of perfect quantum efficiency (100%), such a detector is supposed to convert every photon energy of incident light into exactly one photo ...
[citation needed] For example, the internal structure of an NPN bipolar transistor resembles two P-N junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode.